@article {6869,
	title = {Electro-assist deposition of binary sol-gel films with graded structure.},
	journal = {Electrochim. ActaElectrochimica Acta},
	volume = {102},
	year = {2013},
	note = {CAPLUS AN 2013:857284(Journal; Online Computer File)},
	month = {2013///},
	pages = {212 - 218},
	publisher = {Elsevier Ltd.},
	abstract = {Graded SiO2-TiO2 binary composite films were prepd. by a unique electro-assist deposition approach from a mixt. of sol-gel precursors contg. tetramethoxysilane (TMOS) and Ti tetraisopropoxide (TTIP). A neg. potential applied to either stainless steel or ITO substrates causes the redn. of the solvent, thus increasing the concn. of hydroxyl ions, which enhances the precursor condensation and film deposition. The Ti:Si ratio in the films depends on the deposition potential, time and compn. of the precursor soln. This ratio decreases as the films grow thicker due to the more facile kinetics of SiO2 deposition. Nevertheless, the Ti:Si ratio in the films is always lower than in the corresponding precursor soln. As the Ti:Si ratio in the deposition soln. increases, the thickness of the electro-assist deposited films at the same conditions gradually decreases. SIMS and cross-section EDX anal. show that the Ti:Si ratio in the films increases from the surface to the substrate, suggesting electro-assist deposition as a potential method for 1-step prepn. of graded sol-gel films. [on SciFinder(R)]},
	keywords = {electro assist deposition binary sol gel film graded structure},
	isbn = {0013-4686},
	author = {Liu, Liang and Mandler, Daniel.}
}
